Chongqing Newsin Technology Co., Ltd
engaged in the Manufacturing, Sales, Research of chemicals and special materials.
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2 inch Free-Standing GaN Substrates
Dimensions:Ф 50.8 mm ± 1 mm
Thickness:350 ± 25 µm
Useable Surface Area:> 90%
Orientation:C-plane (0001) off angle toward M-Axis 0.35°± 0.15°
Orientation Flat:(1-100) ± 0.5°, 16.0 ± 1.0 mm
Secondary Orientation Flat:(11-20) ± 3°, 8.0 ± 1.0 mm
Total Thickness Variation:≤ 15 µm
BOW:≤ 20 µm
Conduction Type:N-type(Undoped); N-type(Ge-doped); Semi-Insulating(Fe-doped)
Resistivity(300K): < 0.5 Ω·cm; < 0.05 Ω·cm; >106 Ω·cm
Dislocation Density: 1~9x105 cm-2; 5x105 cm-2; ~3x106 cm-2
1~9x105 cm-2; 1~3x106 cm-2; 1~3x106 cm-2
Polishing:Front Surface: Ra < 0.2 nm. Epi-ready polished
Back Surface: Fine ground